unisonic technologies co., ltd ut150n04 preliminary power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2011 unisonic technologies co., ltd qw-r502-650.a 150a, 40v n-channel power mosfet ? description the utc ut150n04 is a n-channel enhancement mosfet using utc?s advanced technology to provide the customers with perfect r ds(on) and high switching speed. the utc ut150n04 is suitable for all commercial-industrial applications at power dissipation levels to approximately 50 watts, etc. ? features * r ds(on) =3.5m ? @ v gs =10v,i d =95a * high switching speed ? symbol ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing ut150n04l-ta3-t UT150N04G-TA3-T to-220 g d s tube note: pin assignment: g: gate d: drain s: source
ut150n04 preliminary power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-650.a ? absolute maximum ratings parameter symbol ratings unit drain-source voltage v dss 40 v gate-source voltage v gss 20 v t c =25c 150 (note 5) a continuous (v gs =10v) t c =100c i d 115 (note 5) a drain current pulsed (note 2) t c =25c i dm 600 a avalanche current (note 2) i ar 95 a single pulsed (note 3) e as 519 mj avalanche energy repetitive (note 2) e ar 20 mj peak diode recovery dv/dt (note 4) dv/dt 5.0 v/ns power dissipation (t c =25c) p d 166 w junction temperature t j +150 c storage temperature t stg -55~+175 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating: pulse width limi ted by maximum junction temperature 3. starting t j =25c, l=0.12mh, r g =25 ? , i as =95a 4. i sd 95a, di/dt 150a/s, v dd bv dss , t j 175c 5. calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a ? thermal data parameter symbol ratings unit junction to ambient ja 62 c/w junction to case jc 0.75 c/w
ut150n04 preliminary power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-650.a ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250a 40 v breakdown voltage temperature coefficient bv dss / t j reference to 25c, i d =1ma 0.036 v/c v ds =40v, v gs =0v 20 a drain-source leakage current i dss v ds =32v, v gs =0v, t j =150c 250 a forward v gs =+20v +200 na gate- source leakage current reverse i gss v gs =-20v -200 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 2.0 4.0 v static drain-source on-state resistance r ds(on) v gs =10v, i d =95a (note 2) 3.5 4 m ? dynamic parameters input capacitance c iss 7360 pf output capacitance c oss 1680 pf reverse transfer capacitance c rss v gs =0v, v ds =25v, f=1.0mhz 240 pf v gs =0v, v ds =1.0v, f=1.0mhz 6630 pf output capacitance c oss v gs =0v, v ds =32v, f=1.0mhz 1490 pf switching parameters total gate charge q g 160 200 nc gate to source charge q gs 35 nc gate to drain charge q gd i d =95a, v ds =32v, v gs =10v (note 2) 42 60 nc turn-on delay time t d(on) 17 ns rise time t r 140 ns turn-off delay time t d(off) 72 ns fall-time t f v dd =20v, i d =95a, r g =2.5 ? , r d =0.21 ? (note 2) 26 ns source- drain diode ratings and characteristics maximum body-diode continuous current (note 3) i s 150 a maximum body-diode pulsed current (note 1) i sm mosfet symbol showing the integral reverse p-n junction diode. 600 a drain-source diode forward voltage v sd i s =150a,v gs =0v,t j =25c(note 3) 1.3 v body diode reverse recovery time t rr 71 110 ns body diode reverse recovery charge q rr i f =95a, di/dt=100a/s, t j =25c (note 2) 180 270 c notes: 1. repetitive rating: pulse width limited by maximum junction temperature 2. pulse width 300s, duty cycle 2% 3. calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a
ut150n04 preliminary power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-650.a ? test circuits and waveforms v gs dut r g v ds r d resistive switching test circuit resistive switching waveforms v ds v gs 90% 10% t d(on) t r t f t d(off) 10v t on t off
ut150n04 preliminary power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-650.a ? test circuits and waveforms(cont.) v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd same type as dut i sd v gs l driver v gs (driver) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current peak diode recovery dv/dt test circuit and waveforms
ut150n04 preliminary power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-650.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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